Development of NTD-Ge Cryogenic Sensors in LUMINEU - Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse Access content directly
Conference Papers Year : 2016

Development of NTD-Ge Cryogenic Sensors in LUMINEU


One of the goals of LUMINEU is to develop NTD-Ge sensors for various applications. The steps are to produce NTD-Ge sensors first, then to study the dependence of their performance on the production parameters, and finally to optimize their electric contacts. In this paper, we present the different possibilities for estimating and measuring the real neutron fluence received by each Ge wafer irradiated in a thermal neutron reactor. Measurements of their resistivity at 300 K indicate a fluence discrepancy from the expected value and confirm the homogeneity of the doping throughout the volume. In addition, we present a method allowing an improved estimation of the impedance below 30 mK just by measuring the ratio of the NTDs' resistivity at 77 and 4 K.
Fichier principal
Vignette du fichier
article_XavierFrancoisNavick LTD16.pdf (810.72 Ko) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

in2p3-01389609 , version 1 (14-04-2022)



Xavier-Francois Navick, Cyril Bachelet, David Bouville, Noel Coron, Laurent Devoyon, et al.. Development of NTD-Ge Cryogenic Sensors in LUMINEU. 16th International Workshop on Low Temperature Detectors (LTD 16), Jul 2015, GRENOBLE, France. pp.292-298, ⟨10.1007/s10909-016-1572-2⟩. ⟨in2p3-01389609⟩
4 View
3 Download



Gmail Facebook X LinkedIn More